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| EMF6 Transistors Power management (dual transistors) EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !External dimensions (Units : mm) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 0.5 !Structure Silicon epitaxial planar transistor ROHM : EMT6 Each lead has same dimensions !Equivalent circuits Abbreviated symbol F6 (3) (2) (1) Tr2 Tr1 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF6 EMT6 F6 T2R 8000 0.13 0.5 0.5 1.0 1.6 1/5 EMF6 Transistors !Absolute maximum ratings (Ta=25C) Tr1 Symbol Limits VCBO -15 VCEO -12 -6 VEBO -500 IC Collector current -1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW C C 1 2 1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS 20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg -55~+150 Range of storage temperature Unit V V mA mA mA mA mW C C 1 1 2 1 PW10ms Duty cycle50% 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -12 -15 -6 - - - 270 - - Typ. - - - - - -100 - 260 6.5 Max. - - - -100 -100 -250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-1mA IC=-10A IE=-10A VCB=-15V VEB=-6V IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA VCE=-2V, IE=10mA, f=100MHz VCB=-10V, IE=0mA, f=1MHz Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V ms pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10 2/5 EMF6 Transistors !Electrical characteristic curves Tr1 1000 COLLECTOR CURRENT : IC (mA) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125C Ta=25C Ta=-40C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 Ta=25C Pulsed VCE=2V Pulsed 100 100 100 IC/IB=50 IC/IB=20 C Ta=12 5 C Ta=25 Ta= -40 C 10 10 10 IC/IB=10 1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 IC/IB=20 Pulsed 10000 100 Ta=25C Ta=125C 1000 Ta=25C Ta=-40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed 1000 VCE=2V Ta=25C Pulsed 100 Ta=125C Ta=-40C 10 100 10 1 1 10 100 1000 10 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Gain bandwidth product vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 IE=0A f=1MHz Ta=25C 100 Cib 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/5 EMF6 Transistors Tr2 GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.15 4V DRAIN CURRENT : ID (A) 200m 3V DRAIN CURRENT : ID (A) 3.5V Ta=25C Pulsed 100m 50m 20m 10m 5m 2m 1m 0.5m VDS=3V Pulsed 2 VDS=3V ID=0.1mA Pulsed 1.5 0.1 2.5V 1 0.05 2V VGS=1.5V Ta=125C 75C 25C -25C 0.5 0.2m 0 0 1 2 3 4 5 0.1m 0 1 2 3 4 0 -50 -25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.9 Typical output characteristics Fig.10 Typical transfer characteristics Fig.11 Gate threshold voltage vs. channel temperature 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 Ta=125C 75C 25C -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=4V Pulsed 50 Ta=125C 75C 25C -25C VGS=2.5V Pulsed 15 Ta=25C Pulsed 10 2 1 0.5 0.001 0.002 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.12 Static drain-source on-state resistance vs. drain current ( ) Fig.13 Static drain-source on-state resistance vs. drain current ( ) Fig.14 Static drain-source on-state resistance vs. gate-source voltage 9 REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 ID=100mA VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.5 VDS=3V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m 0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=-25C 25C 75C 125C VGS=0V Pulsed ID=50mA Ta=125C 75C 25C -25C 100 125 150 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.16 Forward transfer admittance vs. Fig.15 Static drain-source on-state drain current resistance vs. channel temperature Fig.17 Reverse drain current vs. source-drain voltage ( ) 4/5 EMF6 Transistors REVERSE DRAIN CURRENT : IDR (A) 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V Ta=25C Pulsed 50 20 CAPACITANCE : C (pF) Ta=25C f=1MHZ VGS=0V SWITHING TIME : t (ns) 1000 tf 500 td(off) 200 100 50 20 10 5 2 0.1 0.2 tr td(on) Ta=25C VDD=5V VGS=5V RG=10 Pulsed 10 5 Ciss 0V Coss Crss 2 1 0.5 0.1 0 0.5 1 1.5 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.18 Reverse drain current vs. source-drain voltage ( ) Fig.19 Typical capacitance vs. drain-source voltage Fig.20 Switching characteristics 5/5 |
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